Effect of oxygen flow on electrical and optical properties of ITO films synthesized by magnetron sputtering method

The tin-doped indium oxide thin films were synthesized by DC magnetron sputtering on the surface of polished silicon samples and glass slides in a mixed argon-oxygen atmosphere. The other deposition parameters: operating pressure, magnetron power and substrate rotation speed were kept constant. Thickness and density of thin films were measured by X-ray Reflectometry. The effects of oxygen flow rate and substrate temperature on the optical and electrical properties were investigated. The electrical properties (resistivity, Hall mobility and charge concentration) of the thin films were measured by the Van der Pauw method using the Hall effect. The minimum value of resistivity 0.52 × 10-3 Ohm·cm, and maximum charge mobility 28 cm2V-1s-1 was achieved at an oxygen proportional gas mixture of 2.6% (0.71 sccm). The transmission spectra of the films were measured in the wavelength range from 300 to 1100 nm. The transmittance of all films exceeds 75% in the visible and near-infrared spectral ranges. It was found that increasing the oxygen flow rate and heating of the substrate up to optimal value 150°C led to an increase in the crystallinity of the films and, consequently, to an increase in the Hall mobility and the transmittance.

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