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PHOTOELECTROCHEMICAL PROPERTIES OF NANOSTRUCTURED SILICON FOR SOLAR WATER SPLITTING

https://doi.org/10.55452/1998-6688-2024-21-4-245-253

Abstract

Silicon, one of the most abundant and cost-effective materials on Earth, holds significant promise for applications in water splitting and photovoltaics due to its suitable bandgap energy of approximately 1.12 eV, which allows absorption of ultraviolet, visible, and infrared light. However, the high reflectivity (~25%) of flat silicon surfaces limits its conversion efficiency, making it less efficient for photoelectrochemical (PEC) processes. To address this, nanostructured silicon has emerged as a solution to enhance light absorption, reduce substrate resistance, and improve hydrogen production efficiency. In this study, we fabricated nanostructured silicon photoelectrodes using the metal-assisted chemical etching (MACE) method. The resulting black silicon (b-Si) electrodes demonstrated superior light-harvesting capabilities, leading to significantly enhanced photocurrent densities. Notably, the b-Si photoelectrodes achieved a photocurrent density of 800 μA/cm² at 0V vs RHE (reversible hydrogen electrode), compared to 200 μA/cm² for planar silicon. Furthermore, the b-Si electrodes exhibited excellent long-term stability under continuous illumination for 16 hours. These results highlight the potential of nanostructured silicon as an efficient and stable material for solar-driven PEC water splitting and related renewable energy applications.

About the Authors

Zh. K. Kalkozova
Institute of Applied Science and Information Technologies; Al Farabi Kazakh National University
Kazakhstan

PhD, Associate Professor

Almaty



A. A. Markhabayeva
Institute of Applied Science and Information Technologies; Al Farabi Kazakh National University
Kazakhstan

PhD

Almaty



Y. S. Mukhametkarimov
Institute of Applied Science and Information Technologies; Al Farabi Kazakh National University
Kazakhstan

PhD, Associate Professor

Almaty



Y. Yerlanuly
Institute of Applied Science and Information Technologies; Nazarbayev University
Kazakhstan

PhD

Almaty;

Astana



A. T. Tulegenova
Institute of Applied Science and Information Technologies; Al Farabi Kazakh National University
Kazakhstan

PhD

Almaty



Kh. A. Abdullin
Institute of Applied Science and Information Technologies; Al Farabi Kazakh National University
Kazakhstan

Dr.Phys.-Math.Sc., Professor

Almaty



N. Nuraje
Nazarbayev University
Kazakhstan

PhD, Professor

Astana



C. D. Cao
Northwestern Polytechnical University
China

PhD

Xian



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Review

For citations:


Kalkozova Zh.K., Markhabayeva A.A., Mukhametkarimov Y.S., Yerlanuly Y., Tulegenova A.T., Abdullin Kh.A., Nuraje N., Cao C.D. PHOTOELECTROCHEMICAL PROPERTIES OF NANOSTRUCTURED SILICON FOR SOLAR WATER SPLITTING. Herald of the Kazakh-British Technical University. 2024;21(4):245-253. https://doi.org/10.55452/1998-6688-2024-21-4-245-253

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ISSN 1998-6688 (Print)
ISSN 2959-8109 (Online)