IR SPECTROSCOPY OF A THICK SILICON CARBIDE FILM OBTAINED BY THE MAGNETRON SPUTTERING

In this work, a thick silicon carbide films were synthesized on the c-Si surface by simultaneous mag­netron sputtering of a silicon target and a graphite target in the high-frequency mode of 13.56 MHz. The mag­netron sputtering parameters were as follows: magnetron power - 150 W, argon gas flow rate 2.4 l/h, chamber pressure 0.4 Pa, silicon substrate temperature - 100 °C, deposition time 3 hours. The domination of shortened Si-C-bonds in an amorphous silicon carbide film immediately after deposition was shown for the first time, which led to a shift in the maximum of the IR spectrum to a region above 800 cm^-1 - up to 870 cm^-1. The results are interpreted by intensive nucleation during the deposition process. It was shown that after film deposition, almost half (49.2%) of Si-C bonds are contained in very small nuclei of nanocrystals with sizes less than 3 nm. Rapid annealing for 5 minutes was carried out at a temperature of970°C, which was reached within 10 s. A shift of the maximum of the SiC peak of the IR spectrum from the short-wavelength region (870 cm^-1) to the long-wavelength region (820 cm^-1) of the IR spectrum was observed after rapid annealing of the film. It was revealed that the crystallization of a thick film of silicon carbide does not occur due to crystallization of the amorphous phase, but due to an increase in the size and ordering of the structure of small SiC nuclei and their
transformation into SiC nanocrystals.

1. Liao F., Girshick S. L., Mook W. M., Gerberich, W. W., Zachariah, M. R. Superhard nanocrystalline silicon carbide films // Appl. Phys. Lett. - 2005. - 86. - P. 171913 - 171915.

2. Афанасьев А. В., Ильин В. А., Корляков А. В., Лебедев A. O., Лучинин В. В., Таиров Ю. М. Карбид кремния. Вклад СПбГЭТУ «ЛЭТИ». Признание и перспективы // В кн. Физика и технология микро- и наносистем. - 2011. - С. 50-86 / под ред. В. В. Лучинина и В. В. Малиновского - Санкт-Петербург: Изд. Русская коллекция. - 2011. - 239 с.

3. Yаn Н., Wang В., Song Х. М., Таn L. W., Zhang S. J., Chen G. H., Wong S. P., Kwok R. W. M., Lео W. M. L. Study on SiC layers synthesized with carbon ion beam at low substrate temperature // Diamond and related materials. - 2000. - 9. - P. 1795 - 1798.

4. Chen D., Wong S. P., Yang Sh., Мо D. Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source // Thin Solid Films. - 2003. - 426. - P. 1 - 7.

5. Calcagno L., Musumeci P., Roccaforte F., Bongiorno C., Foti G. Crystallization mechanism of amorphous silicon carbide // Appl. Surf. Sci. - 184. - 2001. - P. 123-127.

6. Nussupov K. Kh., Beisenkhanov N. B., Zharikov S. K., Beisembetov I. K., Kenzhaliev B. K., Akhmetov T. K., Seitov B. Zh. Structure and Composition of Silicon Carbide Films Synthesized by Ion Implantation // Phys. Solid State. - 56 (11). - 2014. - P. 2307-2321.

7. Kukushkin S. A., Osipov A. V., Feoktistov N. A. Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: a review. // Phys. Solid State. - 56 (8). - 2014. - P. 1507-1535.

8. Kukushkin S. A., Nussupov K. Kh., Osipov A. V, Beisenkhanov N. B., Bakranova D. I. Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitution on the high-resistance (111) oriented silicon // Superlattices and Microstructures. - 111. - 2017. - P. 899-911.

9. Перекрестов В. И., Корнющенко А. С., Загайко И. В. Получение пленок карбида кремния ме­тодом магнетронного распыления составной углерод-кремниевой мишени // Журнал нанота електронноі фізики. - 7 (2). - 2015. - 02016 (5cc).

10. Joung Y.-H., Kang H. I., Kim J. H., Lee H.-S., Lee J., Choi W. S. SiC formation for a solar cell passivation layer using an RF magnetron cosputtering system // Nanoscale Res. Lett. - 2012. - 7 (1) : 22.

11. Nussupov K. Kh., Beisenkhanov N. B. The Formation of Silicon Carbide in the SiCx Layers (x = 0.03-1.4) Formed by Multiple Implantation of C Ions in Si. In book: Silicon carbide - Materials, Processing and Applications in Electronic Devices. - 2011. - Ed. Moumita Mukherjee. - InTech. - Chapter 4. - P. 69 - 114.

12. Chen D., Cheung W. Y, Wong S. P. Ion beam induced crystallization effect and groth kinetics of buried SiC layers formed by carbon implantation into silicon // Nuclear Instruments and Methods in Phys. Res. B. - 148. - 1999. - P. 589-593.

13. Mutschke H., Andersen A. C., Clement D., Henning T. Peiter. Infrared properties of SiC particles // Astron. Astrophys. - 1999. - V. 345. -P. 187-202.

14. Лисовский И. П., Индутный И. З., Гненный Б. Н., Литвин П. М., Мазунов Д. О., Оберемок А. С., Сопинский Н. В., Шепелявый П. Е. Фазово-структурные превращения в пленках SiOx в процессе вакуумных термообработок // Физика и техника полупроводников. - 2003. - Т. 37, вып.1. - С. 98-103.

15. Nussupov K. Kh., Beisenkhanov N. B., Valitova I. V., Mit’ K. A., Mukhamedshina D. M., Dmitrieva E. A. Structure properties of carbon implanted silicon layers // J. of Materials Science: Materials in Electronics. - 2008. - 19. - Р. 254-262.