STRUCTURAL PROPERTIES OF A SILICON CARBIDE FILM SYNTHESIZED BY THE ATOM SUBSTITUTION METHOD

In this work, the atomic substitution method was used to synthesize a single-crystal silicon carbide film containing crystalline ß-SiC and 2H-SiC phases in the surface region of a Si (100) wafer. The films were synthesized in a special laboratory electric furnace at a temperature of 1250°C for 20 minutes in a flowing CO gas at a pressure of 0.8 Pa. Using the methods of high-sensitivity X-ray diffraction and infrared spectroscopy, the presence of SiC nanocrystals with a high degree of structural perfection has been shown. These nanocrystals can be located both at the interface “SiCfilm - Si substrate” and inside the silicon substrate, covering the inner pore surface. It was shown that about 80 % of Si - C bonds are contained in the crystalline phase of silicon carbide, including the single crystal layer, nanocrystals, and their nuclei. The amorphous phase of silicon carbide (9.3%) in the film is a mixture of highly defective deformed nanocrystals. The maxima of the components at 785.5 cm^-1 and 788.0 cm^-1 of the amorphous phase are shifted close to 795.9 cm-1, which is characteristic of the crystalline в-SiC (ЗС-SiC) phase. This is due to the increased synthesis temperature (1250 °C) of silicon carbide film. Also, part of the Si-C bonds (10.4 %) are included in the composition of SiC clusters and dilatation dipoles.

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