kaz29Вестник Казахстанско-Британского технического университетаHerald of the Kazakh-British Technical University1998-66882959-8109Казахстанско-Британский Технический Университет10.55452/1998-6688-2026-23-3-448-460kaz29-3205Research ArticleФИЗИЧЕСКИЕ НАУКИPHYSICAL SCIENCESИССЛЕДОВАНИЕ ПРОЦЕССА РОСТА НАНОСТРУКТУРИРОВАННЫХ ТОНКИХ СЛОЕВ НИТРИДА УГЛЕРОДА В РАДИОЧАСТОТНОЙ ПЛАЗМЕ ГАЗОВОЙ СМЕСИ АЗОТ-МЕТАНSTUDY OF GROWTH EVALUATION OF NANOSTRUCTURED CARBON NITRIDE THIN LAYERS IN NITROGEN-METHANE GAS MIXTURE RADIOFREQUENCY PLASMAhttps://orcid.org/0000-0002-9847-1067БатрышевД. Г.BatryshevD. G.

PhD, ассоциированный профессор

Алматы

PhD, Associate Professor

Almaty

d.batryshev@kbtu.kzhttps://orcid.org/0000-0001-6652-1923ӘбдірахмановА. Р.AbdirakhmanovA. R.

PhD, ассоциированный профессор

Алматы, Монс, Бельгия 

PhD, Postdoc

Almaty, Mons, 7000, Belgium

abdirakhmanov@physics.kzhttps://orcid.org/0000-0002-6995-0368БуфендиЛ.BoufendiL.

PhD, профессор

Алматы

PhD, Professor

Almaty

laifa.boufendi@physics.kzhttps://orcid.org/0000-0002-7286-9990ОразбаевС. А.OrazbayevS. A.

PhD, ассоциированный профессор

Алматы

PhD, Associate Professor

Almaty

sagi.orazbayev@gmail.comhttps://orcid.org/0009-0000-5616-7131БайқалиевА.BaikaliyevA.

PhD студент

Алматы

PhD student, Junior researcher

Almaty

akdauletbai@gmail.comhttps://orcid.org/0000-0001-7172-8005РамазановТ. С.RamazanovT. S.

Д.ф.-м.н., профессор

Алматы

Doctor of Physical and Mathematical Sciences, Professor

Almaty

ramazan@physics.kzКазахстанско-Британский технический университетКазахстанKazakh-British Technical UniversityKazakhstanКазахстанско-Британский технический университет; Университет МонсаКазахстанKazakh-British Technical University; Mons UniversityKazakhstanКазахский национальный университет им. аль-ФарабиКазахстанAl-Farabi Kazakh National UniversityKazakhstanКазахстанско-Британский технический университет; Казахский национальный университет им. аль-ФарабиКазахстанKazakh-British Technical University; Al-Farabi Kazakh National UniversityKazakhstan202627092026233448460Copyright © Батрышев Д.Г., Әбдірахманов А.Р., Буфенди Л., Оразбаев С.А., Байқалиев А., Рамазанов Т.С., 20262026Батрышев Д.Г., Әбдірахманов А.Р., Буфенди Л., Оразбаев С.А., Байқалиев А., Рамазанов Т.С.Batryshev D.G., Abdirakhmanov A.R., Boufendi L., Orazbayev S.A., Baikaliyev A., Ramazanov T.S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestnik.kbtu.edu.kz/jour/article/view/3205

Аморфные тонкие пленки нитрида углерода (a-CNₓ) были синтезированы методом плазменно-активированного химического осаждения из газовой фазы (PECVD) в радиочастотной (РЧ) разрядной плазме азотно-метановой газовой смеси при частоте 13,56 МГц с использованием импульсной модуляции плазмы. Динамика постоянного напряжения автосмещения (Vdc) регистрировалась в качестве диагностического параметра непосредственно в процессе синтеза для мониторинга зародышеобразования, роста и агломерации наночастиц. Установлено, что после зажигания плазмы абсолютное значение Vdc монотонно уменьшается, а начало агломерации наночастиц может быть достоверно определено по характерному изменению зависимости Vdc(t), что согласуется с трехстадийной моделью формирования пылевых частиц в низкотемпературной плазме. Показано, что время начала агломерации (tagl) существенно зависит от расхода метана, рабочего давления и мощности ВЧ-разряда: при базовых условиях (0,86 мбар, 20 Вт) увеличение расхода CH4 с 2 до 7 sccm сокращает tagl с 4,4 с до 200 мс, тогда как влияние давления и мощности характеризуется соответственно доминирующим и немонотонным характером. Полученные результаты использованы для выбора продолжительности импульсов включения плазмы при контролируемом росте пленок. Образцы, осажденные в режиме импульсной модуляции, исследованы методами SEM, EDS, FTIR и XRD, что подтвердило формирование сплошных нестехиометрических пленок нитрида углерода с преобладанием связей C–N и C=N. Полученные результаты показывают, что мониторинг напряжения автосмещения является эффективным и доступным методом контроля кинетики роста наночастиц a-CNх непосредственно в процессе синтеза, а также позволяет регулировать рост, морфологию и химическую структуру пленок посредством параметров импульсной ВЧ-плазмы.

Amorphous carbon nitride (a-Cx Ny ) thin films were synthesized by plasma-enhanced chemical vapor deposition (PECVD) in a nitrogen–methane radiofrequency (RF) discharge plasma (13.56 MHz) using pulsed plasma modulation. The evolution of the DC self-bias voltage (Vdc) was monitored as an in situ diagnostic parameter to track nanoparticle nucleation, growth, and agglomeration during synthesis. It was found that the absolute value of Vdc decreases monotonically following plasma ignition, and that the onset of nanoparticle agglomeration can be reliably identified from a characteristic change in the Vdc(t) curve, consistent with the three-stage model of dustparticle formation in low-temperature plasma. The agglomeration onset time (tagl) was shown to depend strongly on methane flow rate, working pressure, and RF power: at baseline conditions (0.86 mbar, 20 W), increasing the CH4 flow rate from 2 to 7 sccm reduced tagl from 4.4 s to 200 ms, while pressure and power exhibited dominant and nonmonotonic effects, respectively. These findings guided the selection of plasma-on pulse durations for controlled film growth. Samples deposited under pulsed modulation were characterized by SEM, EDS, FTIR, and XRD, confirming the formation of continuous, nonstoichiometric carbon nitride films dominated by C–N and C=N bonding. The results demonstrate that self-bias voltage monitoring is an effective, accessible method for in situ control of a-Cx Ny nanoparticle growth kinetics and for tailoring film thickness, morphology, and chemical structure via pulsed RF plasma parameters.

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The authors declare that there are no conflicts of interest present.