kaz29Вестник Казахстанско-Британского технического университетаHerald of the Kazakh-British Technical University1998-66882959-8109Казахстанско-Британский Технический Университет10.55452/1998-6688-2026-23-1-325-333kaz29-2526Research ArticleФИЗИЧЕСКИЕ НАУКИPHYSICAL SCIENCESКРИСТАЛЛИЗАЦИЯ АМОРФНЫХ ТОНКИХ ПЛЕНОК СЕЛЕНИДА ИНДИЯCRYSTALLIZATION OF AMORPHOUS INDIUM SELENIDE THIN FILMShttps://orcid.org/0009-0008-0681-8475ОманЗ.OmanZ.

магистр

г. Алматы

MSc

Almaty

omankaznu@gmail.comhttps://orcid.org/0009-0006-1917-4547НурлыбековН. О.NurlybekovN. O.

магистр

г. Алматы

MSc

Almaty

idcnurken@gmail.comhttps://orcid.org/0009-0008-6949-3161КарибаеваК. А.KaribaevaK. A.

магистр

г. Алматы

MSc

Almaty

kaldygul.karibaeva@bk.ruhttps://orcid.org/0009-0001-8892-4026ЖылысбаевК. К.ZhylysbaevU. K.

бакалавр

г. Алматы

BSc

Almaty

ulankhan0802@gmail.comhttps://orcid.org/0009-0000-4907-4623ХуанМ.HuanM.

магистр

г. Алматы

MSc

Almaty

maohua0114@gmail.comhttps://orcid.org/0000-0002-0657-422XМархабаеваА. А.MarhabaevaA. A.

PhD

г. Алматы

PhD

Almaty

aiko_marx@mail.ruhttps://orcid.org/0000-0002-8782-703XНемкаеваР. Р.NemkaevaR. R.

магистр

г. Алматы

MSc

Almaty

quasisensus@mail.ruhttps://orcid.org/0000-0003-1381-4532МухаметкаримовЕ. С.MuhametkarimovE. S.

PhD, доцент

г. Алматы

PhD, Associate Professor

Almaty

yerzhan.mukhametkarimov@kaznu.kzНациональная нанотехнологическая лаборатория открытого типа, КазНУ им. аль-ФарабиКазахстанNational Open-Type Nanotechnology Laboratory, Al-Farabi Kazakh National UniversityKazakhstan202629032026231325333Copyright © Оман З., Нурлыбеков Н.О., Карибаева К.А., Жылысбаев К.К., Хуан М., Мархабаева А.А., Немкаева Р.Р., Мухаметкаримов Е.С., 20262026Оман З., Нурлыбеков Н.О., Карибаева К.А., Жылысбаев К.К., Хуан М., Мархабаева А.А., Немкаева Р.Р., Мухаметкаримов Е.С.Oman Z., Nurlybekov N.O., Karibaeva K.A., Zhylysbaev U.K., Huan M., Marhabaeva A.A., Nemkaeva R.R., Muhametkarimov E.S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestnik.kbtu.edu.kz/jour/article/view/2526

В данной работе проведено исследование кристаллизации аморфных пленок селенида индия (InSe) при термической обработке в инертной атмосфере. Пленки получены методом термического испарения объемных кристаллов InSe стехиометрического состава в условиях высокого вакуума. Анализ структуры пленок осуществлялся методами рамановской спектроскопии и рентгеновской дифракции, результаты которых указывают на изначальную аморфную фазу, которая переходит в структуру стехиометрического InSe с гексагональной кристаллической решеткой в результате термической обработки при температуре 350 °С. Особенностью исследуемых пленок является значительный контраст в удельном электрическом сопротивлении между аморфным и кристаллическим состояниями. Переход в кристаллическую фазу сопровождается резким снижением электрического сопротивления на несколько порядков, что позволяет косвенно оценить температуру кристаллизации пленок путем измерения зависимости сопротивления образца от температуры. В данной работе обнаружено резкое изменение электрического сопротивления в области ~ 140 °C, соответствующее температуре кристаллизации исследуемых образцов. Полученные результаты подтверждают возможность формирования поликристаллической пленки InSe на больших площадях, что, в свою очередь, является важным при создании прототипов оптоэлектронных устройств. Кроме того, в работе продемонстрирована возможность локальной кристаллизации пленок InSe с использованием технологии лазерного гравирования.

In this paper, we study the crystallization of amorphous indium selenide (InSe) films during heat treatment in an inert atmosphere. The films were obtained by thermal evaporation of bulk stoichiometric InSe crystals under conditions of high vacuum. The film structure was analyzed using Raman spectroscopy and X-ray diffraction analysis, the results of which indicate the initial amorphous phase that transforms into a stoichiometric InSe structure with a hexagonal crystal lattice under heat treatment at 350°C. A feature of the studied films is a significant contrast in the specific electrical resistance between the amorphous and crystalline states. The transition to the crystalline phase is accompanied by a sharp decrease in electrical resistance – by several orders of magnitude, which makes it possible to indirectly determine the crystallization temperature of the films by measuring the temperature dependence of the sample’s resistance. In this work, a sharp change in resistance was found in the region of ~ 140°C, corresponding to the crystallization temperature of the studied samples. The obtained results confirm the possibility of forming a polycrystalline InSe film on large areas, which in turn is important when creating prototypes of optoelectronic devices. Furthermore, in this work, the feasibility of local crystallization of InSe thin films was demonstrated using laser patterning technique.

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The authors declare that there are no conflicts of interest present.