kaz29Вестник Казахстанско-Британского технического университетаHerald of the Kazakh-British Technical University1998-66882959-8109Казахстанско-Британский Технический Университет10.55452/1998-6688-2025-22-4-365-373kaz29-2307Research ArticleФИЗИЧЕСКИЕ НАУКИPHYSICAL SCIENCESПОЛУЧЕНИЕ И ИССЛЕДОВАНИЕ ПЛЕНКИ СЕЛЕНИДА СУРЬМЫ ПУТЕМ СЕЛЕНИЗАЦИИPREPARATION AND INVESTIGATION OF ANTIMONY SELENIDE FILM BY SELENIZATIONhttps://orcid.org/0000-0002-7352-9007ШонғаловаА. К.ShongalovaA. K.

PhD, старший научный сотрудник ФТИ

г. Алматы

PhD, Senior Researcher at IPT

Almaty

shongalova.aigul@gmail.comhttps://orcid.org/0000-0002-0663-0228ТокмолдинН.TokmoldinN.

PhD

г. Потсдам

PhD

Potsdam

tokmoldin@pdi-berlin.dehttps://orcid.org/0009-0003-2275-9018ӨміртайМ.OmirtayM.

магистрант

г. Алматы

Master’s student

Almaty

m.omirtay@gmail.comФизико-технический институт, Satbayev UniversityКазахстанInstitute of Physics and Technology, Satbayev UniversityKazakhstanИнститут физики и астрономии, Потсдамский университетГерманияInstitute of Physics and Astronomy, University of PotsdamGermanySatbayev UniversityКазахстанSatbayev UniversityKazakhstan202523122025224365373Copyright © Шонғалова А.К., Токмолдин Н., Өміртай М., 20252025Шонғалова А.К., Токмолдин Н., Өміртай М.Shongalova A.K., Tokmoldin N., Omirtay M.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestnik.kbtu.edu.kz/jour/article/view/2307

В данной работе представлены метод синтеза пленки селенида сурьмы (Sb2Se3), а также исследования его морфологии, структурных и оптических свойств. Метод синтеза состоял из двух этапов. На первом этапе с помощью магнетронного распыления был получен прекурсор из сурьмы. На втором этапе была проведена селенизация в парах селена при температуре 400 °C в течение 10 минут. Морфология полученных пленок была исследована с помощью сканирующей электронной микроскопии. Результаты исследования морфологии показали, что пленка имеет поликристаллическую структуру с хорошей адгезией к кремниевой подложке. С помощью энергодиспергирующей спектрокопии (ЭДС) был исследован элементный состав пленки. По результатам ЭДС соотношение атомного процента Se/Sb составило 1,59, что указывает на получение пленки, близкой к стехиометрическому. Данные, полученные ЭДС, были подтверждены исследованием фазового состава, выполненным методом рентгенофазного исследования. Было выяснено, что пленка кристаллизируется в орторомбической сингонии (Pnma). Дополнительных фаз в структуре не было обнаружено. Для исследования оптоэлектронных свойств пленки был снят спектр отражения. Из спектра отражения методом Таука была определена ширина запрещенной зоны, равная 1,69 эВ, что является оптимальным для применения в оптоэлектронных устройствах.

In this work, a method for synthesizing antimony selenide (Sb2Se3) thin films is presented, along with investigations of their morphology, structural, and optical properties. The synthesis method consisted of two stages. In the first stage, an antimony precursor film was deposited by magnetron sputtering. In the second stage, selenization was carried out in selenium vapor at a temperature of 400 °C for 10 minutes. The morphology of the obtained films was examined using scanning electron microscopy. The morphological analysis showed that the film has a polycrystalline structure with good adhesion to the silicon substrate.The elemental composition of the film was analyzed by energy-dispersive X-ray spectroscopy (EDS). According to the EDS results, the atomic percentage ratio of Se/Sb was 1.59, indicating that the obtained film is close to stoichiometric composition. The EDS data were confirmed by phase composition analysis performed using X-ray diffraction. It was found that the film crystallizes in the orthorhombic structure (Pnma). No secondary phases were detected in the structure. To investigate the optoelectronic properties of the film, a reflectance spectrum was recorded. From the reflectance spectrum, the band gap energy was determined using the Tauc method and found to be 1.69 eV, which is optimal for applications in optoelectronic devices.

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The authors declare that there are no conflicts of interest present.