kaz29Вестник Казахстанско-Британского технического университетаHerald of the Kazakh-British Technical University1998-66882959-8109Казахстанско-Британский Технический Университет10.55452/1998-6688-2024-21-3-248-257kaz29-1386Research ArticleФИЗИЧЕСКИЕ НАУКИPHYSICAL SCIENCESИССЛЕДОВАНИЕ РАЗЛИЧНЫХ МЕХАНИЗМОВ РАДИАЦИОННОЙ РЕКОМБИНАЦИИ НИТРИДА КРЕМНИЯ КАК ЭФФЕКТИВНОГО СПОСОБА РАСШИРЕНИЯ СПЕКТРА ФОТОЛЮМИНЕСЦЕНЦИИINVESTIGATION OF VARIOUS MECHANISMS OF RADIATIVE RECOMBINATION OF SILICON NITRIDE AS AN EFFECTIVE WAY TO BROADENING THE PHOTOLUMINESCENCE SPECTRUMhttps://orcid.org/0000-0001-6519-1969МурзалиновД.MurzalinovD.

PhD 

050013, г. Алматы

PhD 

050013, Almaty

d.murzalinov@sci.kzhttps://orcid.org/0000-0003-4813-8490КемелбековаА.KemelbekovaA.

PhD 

050013, г. Алматы

PhD 

050013, Almaty

a.kemelbekova@satbayev.universityhttps://orcid.org/0000-0002-2570-8190ЖапаковР.ZhapakovR.

докторант 

050013, г. Алматы

PhD student 

050013, Almaty

zharash@mail.ruhttps://orcid.org/0000-0001-9689-160XСередавинаТ.SeredavinaT.

к.т.н. 

050013, г. Алматы

Candidate of technical sciences 

050013, Almaty

t.seredavina@sci.kzhttps://orcid.org/0000-0001-6168-2787ЕлемесовК.YelemessovK.

профессор 

050013, г. Алматы

Professor 

050000, Almaty

k.yelemessov@satbayev.universityhttps://orcid.org/0000-0001-5389-0033БегуновМ.BegunovM.

магистр 

050013, г. Алматы

Master 

050013, Almaty

begunov028@gmail.comСәтбаев университет, Физика-технический институтКазахстанSatbayev University, The Institute of Physics and TechnologyKazakhstanИнститут энергетики и машиностроения им. А. БуркитбаеваКазахстанInstitute of Energy and Mechanical Engineering named after A. Burkitbayev, Satbayev UniversityKazakhstan202402102024213248257Copyright © Мурзалинов Д., Кемелбекова А., Жапаков Р., Середавина Т., Елемесов К., Бегунов М., 20242024Мурзалинов Д., Кемелбекова А., Жапаков Р., Середавина Т., Елемесов К., Бегунов М.Murzalinov D., Kemelbekova A., Zhapakov R., Seredavina T., Yelemessov K., Begunov M.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestnik.kbtu.edu.kz/jour/article/view/1386

Разработка устройств, сочетающих оптические и электрические функции на основе кремнийсодержащих материалов, является одной из задач микроэлектроники. Путем плазменного синтеза с усиленным химическим осаждением из газовой фазы и последующего отжига были получены образцы нитрида кремния как с избытком кремния, так и с избытком азота. Высокую концентрацию связей Si-H и N-H определяли методом рамановской спектроскопии в образцах перед отжигом. С помощью просвечивающей электронной микроскопии было определено, что помимо нитрида кремния, в матрице образца образуются кластеры кремния. Спектры фотолюминесценции существенно изменялись для обоих типов образцов при отжиге в различных газовых атмосферах. Термическая обработка образцов при 1100 °С после синтеза привела к исчезновению спектра ПЛ, а после отжига при 800 °С фотолюминесценция увеличивается. Отмечено, что наибольшая интенсивность фотолюминесценции была обнаружена после отжига в воздушной атмосфере и наименьшая – в азоте. Участие N-центров в рекомбинационных процессах подтверждено методом электронного парамагнитного резонанса. Рассмотрены различные механизмы взаимодействия частиц, приводящих к фотолюминесценции и накоплению заряда. Таким образом, подобраны условия синтеза и отжига слоев нитрида кремния для получения управляемых люминесцентных свойств в различных спектральных диапазонах.

The development of devices combining optical and electrical functions based on silicon-containing materials is one of the challenges in microelectronics. By plasma enhanced chemical vapor deposition synthesis and subsequent annealing, silicon nitride samples with both excess silicon and excess nitrogen were formed. The high concentration of Si-H and N-H bonds was determined by Raman spectroscopy in samples before annealing. By the transmission electron microscopy, it was determined that in addition to silicon nitride, silicon clusters were formed in the sample’s matrix. The photoluminescence spectra changed significantly for both types of samples during annealing in different gas atmospheres. Heat treatment of samples at 1100 °C after synthesis led to the disappearance of the PL spectrum, and after annealing at 800 °C, photoluminescence increases. It is noted that the highest intensity of photoluminescence was detected after annealing in the air atmosphere and the lowest in the nitrogen. The participation of N centers in recombination processes was confirmed by the method of electron paramagnetic resonance. The different mechanisms of particle interaction leading to photoluminescence and charge storage are considered. Thus, the conditions for the synthesis and annealing of silicon nitride layers are selected to obtain controlled luminescent properties in various spectral ranges.

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The authors declare that there are no conflicts of interest present.